Research Status of GaN Film Growth

This paper introduces the important application fields, growth methods and molecular dynamics research of GaN. Due to lack homogeneous substrate, GaN film is limited crystal quality poor. At present, heteroepitaxial has some problems, such as high fault density, large residual stress uneven thickness. The intermediate AlN buffer layer used reduce lattice mismatch thermal expansion coefficient between substrate. Meanwhile, mechanism not well understood. In addition, simulation an effective tool study growth, which can reveal process evolution dislocation from a microscopic perspective. this work provide reference for next step growth.